TechLuver.com

BOISE, Idaho & SANTA CLARA, Calif –BUSINESS WIRE– Feb 01, `08 — Intel and Micron Technology today unveiled a high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for storage. The new technology – developed jointly by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT) – is five times faster than conventional NAND, allowing data to be transferred in a fraction of the time for computing, video, photography and other consumer applications.

The new high speed NAND can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.

“The computing market is embracing NAND-based solutions to accelerate system performance through the use of caching and solid-state drives,” said Pete Hazen, director of marketing, Intel NAND Products Group. “At up to five times the performance over conventional NAND, the high speed NAND from Intel and Micron, based on the ONFi 2.0 industry standard, will enable new embedded solutions and removable solutions that take advantage of high–performance system interfaces, including PCIe and upcoming standards such as USB 3.0.”

For example, the specific performance advantages of high speed NAND in today’s most popular devices include:

* When used in a hybrid hard drive, high speed NAND can allow the system to read and write data anywhere between two or four times the speed when compared to conventional hard drives.
* With the popularity of digital video cameras and video on demand services, high speed NAND can enable a high-definition movie to be transferred five times faster than conventional NAND.
* With the pending USB 3.0 interface, high speed NAND is expected to effectively deliver on the increased data transfer rates of the new specification, where conventional NAND would act as the bottleneck in system performance. USB 3.0 is aiming for 10 times the bandwidth of current USB 2.0 solutions, or approximately achieving 4.8 gigabits per second.
* As NAND continues to move into the PC platform, the Non-Volatile Memory Host Controller Interface (NVMHCI) can take advantage of high speed NAND in solutions such as Intel Turbo Memory, allowing for even better system performance. NVMHCI is designed to provide a standard software programming interface allowing operating system drivers to access NAND flash memory storage in applications such as hard drive caching and solid-state drives. More at Micron.

Tokyo, Japan — Hitachi, Japan’s biggest electronics conglomerate, plans to exit the business of making small hard disk drives as demand shifts to flash memory chips, Reuters reports citing the Nikkei business daily reports on Sunday.

“Hitachi’s hard drive unit, Hitachi Global Storage Technologies has already stopped production of 1-inch hard drives and plans to stop shipping 1.8-inch drives around next summer, the newspaper said.

The Nikkei also said Hitachi rival Fujitsu has given up on plans to enter the market for small drives. Fujitsu had been developing 1.8-inch drives with U.S.-based Cornice with plans to bring a product to market in 2007.

Hitachi will focus on 2.5-inch and 3.5-drives, anticipating strong demand for the bigger drives that are used in personal computers and digital electronics such as DVD recorders, the Nikkei said.” More at Reuters.

Next-generation HDTVs to use 4.8Gbps XDR DRAM

LOS ALTOS, Calif — Dec 17, `07 –BUSINESS WIRE– Rambus today announced that Toshiba Corporation has licensed its XDR memory controller interface cell (XIO) and XDR memory controller (XMC) for next-generation high-definition television (HDTV) chipsets. The XIO and XMC will be implemented in Toshiba’s 65nm process. Operating at 4.8Gbps, the XDR memory architecture will allow Toshiba’s HDTV chipset to deliver state-of-the-art image processing performance in its customers’ HDTVs.

The XDR memory architecture uses patented Rambus innovations such as Octal Data Rate (ODR) technology, Differential Rambus Signaling Level (DRSL), and FlexPhase circuits to deliver the highest bandwidth available while using fewer DRAM devices than industry-standard memory solutions. Higher memory performance as delivered by the XDR architecture enables the advanced features of next-generation HDTVs such as 1080p+ resolution, 120Hz refresh rates, 12-bit color, multiple full HD Picture-in-Picture (PiP) data streams, and advanced image enhancement algorithms.More here.

On  Dec 14 Intel announced the Intel Z-P140 PATA Solid State Drive (SSD), an ultra-small - smaller than a penny, weighing less than a drop of water - complete storage solution for mobile digital entertainment, and embedded applications, offering low-power, high performance, and durability, which is also 400x smaller than a 1.8″ hard-drive.

Using the industry standard PATA interface, the Intel Z-P140 PATA SSD offers the capacity and features to accelerate computing trends towards greater mobility.

Right Fit
Using the standard PATA interface, chipscale package-on-package technology, and a form factor significantly smaller than hard disk drives, the Z-P140 PATA SSD enables smaller and easier storage design.

Right Capacity
2, 4, 8, and 16GB capacities are enough to support operating system storage, applications, data, and media storage, meeting mainstream density requirements for most computing markets.

Right Performance
Fast to boot, load, and run applications, with low power and extended durability, solid state technology has no moving parts, allowing for faster system response and longer battery life.

More at Intel here and here (in pdf).

Boise, Idaho — Micron Technology on Wednesday, Dec 12, announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer DRAM process technology.

The new process, coupled with Micron’s 6F² technology, has enabled the world’s smallest production 1Gb DDR2 memory with a die size of just 56mm². Mass production of its new 68nm 1 Gb DDR2 products is expected to begin early next year, with DDR3 and other low-power DRAM products expected to follow in the second half of the year.

This new advanced memory technology will be targeted at server, mobile and other computing applications where the benefits of reduced die size, faster speeds and lower power consumption are most critical.

Upcoming DDR3 products developed on the new process will allow for speeds up to 1600 megabits per second (Mbps). The 68nm process also provides approximately 20 percent lower power consumption when compared to previous process generations.

Future DDR3 chips designed on the 68nm process will join Micron’s Aspen Memory family of energy-efficient products, which are specifically designed for applications where power reduction is desired such as data center servers and notebook computers. More at Micron.

Seoul, South Korea & Tokyo, Japan –BUSINESS WIRE– Dec 03, ‘07 — Samsung Electronics and Toshiba today announced that they have licensed to one another the rights to produce, market and sell memory with the specifications and trademarks of Samsung’s OneNAND and Toshiba’s LBA-NAND memory chips.

As a result of the reciprocal arrangement, original equipment manufacturers (OEMs) will have a broader choice of suppliers for each premium memory chip, thereby reducing any potential risk of over-dependence on a single supplier for any of the selected chips. The arrangement is expected to result in increased availability of premium-performance OneNAND and LBA-NAND flash devices worldwide.

Under terms of the agreement, Samsung will license product specifications of its integrated OneNAND and Flex-OneNAND “fusion” memory chips to Toshiba, while Toshiba will license product specifications of its single-package LBA-NAND and mobileLBA-NAND flash chips to Samsung. Both companies will develop and market products that are compatible with the respective original-source technology. Samsung and Toshiba each plan to release products next year based on the respectively licensed product specifications. More here.

SAN JOSE, Calif –BUSINESS WIRE– Dec 01, ‘07 — Samsung Electronics announced today that it has developed the world’s fastest memory, a GDDR5 (series five, graphics double-data-rate memory) chip that can transfer data at six gigabits per second, which is more than four times faster than that of memories in state-of-the-art game consoles today.

Samsung’s GDDR5, which will be introduced at a density of 512 Mbit (16Mb x 32) chips, is capable of transmitting moving images and associated data at 24 gigabytes per second.

“We’re pushing image enhancement to a limit never before realized, enabling the smoothest, clearest animation that gamers have yet to experience,” said Mueez Deen, Marketing Director, Graphics Memory, Samsung Semiconductor. “Samsung’s 512Mb GDDR5 will enable the kind of graphics hardware performance that will spur software developers to deliver a new level of eye-popping games.”

The new Samsung graphics memory operates at 1.5 volts, representing an approximate 20 percent improvement in power consumption over today’s most popular graphics chip – the GDDR3.

Samples of Samsung’s new GDDR5 chip have been delivered to major graphic processor companies last month and mass production is expected in the first half of 2007.

Samsung expects that GDDR5 memory chips will become the de facto standard in the top performing segment of the market by capturing more than 50 percent of the high-end PC graphics market by 2010.

Related:

Hynix Introduces Industry’s First 1Gb GDDR5 DRAM

Samsung Intros Its Highest-Speed DDR2 Main Memory and Fastest Graphics Memory

Taipei, Taiwan — Nov 26, ‘07 –Jimmy Hsu of DigiTimes reports on Samsung Electronics, in a bid to promote sales of its digital cameras at the annual IT Month fair to take place in Taipei in early December, offering a 4GB SD memory card as a gift along with the sale of Samsung digital cameras, citing retail channels in the Taiwan market.

He further writes, “Price competition that has been ongoing for up to two years in the Taiwan market has reduced sales margins for digital cameras to a low level of $15.5-24.7 (NT$500-800), and vendors have started to opt for offering gifts instead of further price cuts, the sources indicated.

Memory cards are the most common promotional gifts offered alongside digital cameras, usually a 1GB SD card for an entry-level model and a 2GB SD card for a mid-range or high-end model, the sources noted. However, Samsung will take the initiative in offering 4GB SD cards and it is uncertain whether main competitors, including Canon, Sony, Panasonic, Nikon and Casio, will follow suit, the sources pointed out.” More at DigiTimes.

FOUNTAIN VALLEY, Calif –BUSINESS WIRE– Nov 19, ‘07 — Kingston today announced it is shipping 1066MHz ValueRAM designed specifically for the new AMD Phenom Processor. Kingston worked closely with AMD on the launch of the Spider Platform, comprised of the new Phenom Processor, ATI Radeon HD 3800 Series graphics card and the AMD 7-Series Chipset, to ensure peak memory performance. Kingston’s 1066MHz ValueRAM modules help take advantage of Phenom’s ability to deliver true quad-core performance.

“The new Phenom processor from AMD will give high-performance and multi-threaded applications room to excel,” said Mark Tekunoff, senior technology manager, Kingston. “DDR2 1066MHz ValueRAM desktop memory has been designed and tested to complement AMD’s new chipset and CPU technologies, giving high-end users the ultimate experience.”

Memory is essential in optimizing the performance of the new Spider Platform. Kingston’s DDR2 memory modules help fuel Phenom’s four natively integrated processor cores, breaking system bandwidth barriers and turbo-charging platform performance.

Kingston DDR2 ValueRAM 1066MHz Specifications
Part Number                    Capacity and Features                                    MSRP (US only)
KVR1066D2N7/512           512MB 1066MHz (CL7-7-7-20 @ 1.8V)              $ 89.00
KVR1066D2N7/1G            1GB 1066MHz (CL7-7-7-20 @ 1.8V)                  $ 178.00
KVR1066D2N7K2/1G        1GB 1066MHz (CL7-7-7-20 @ 1.8V) kit of 2       $ 170.00
KVR1066D2N7K2/2G        2GB 1066MHz (CL7-7-7-20 @ 1.8V) kit of 2       $ 340.00

SAN JOSE, Calif –BUSINESS WIRE– Nov 19, ‘07 — Samsung announced today that its highest-speed DDR2 main memory and its fastest graphics memory have been designed to work smoothly with the new AMD Phenom processors and new ATI Radeon HD 3800 Series of graphics processing units (GPU) for desktop PCs.

AMD Phenom processors provide a high-speed L3 2MB cache to enhance the information flow between processor cores, main memory, and graphics and video accelerators.

The Samsung 512 megabit (Mb) DRAM (dynamic random access memory), capable of 1066 million data transfers per second, is Samsung’s fastest DDR2 chip and is available in densities up to 1 gigabyte (GB) per module.

“AMD is delighted that Samsung is producing a high performance memory solution well suited for our new AMD Phenom processors,” said Bob Brewer, corporate vice president of marketing and strategy, AMD. “Samsung’s leading-edge GDDR4 and GDDR3 graphics memory can provide a significant performance boost for systems that use our ATI Radeon HD GPUs.”

Samsung’s fastest memory chip – its GDDR4 1.2Ghz has been designed to be fully compatible with AMD’s new ATI Radeon HD 3870 GPU. ATI Radeon HD 3800 Series of GPUs transfer data at 72 gigabits (Gbps) per second, while consuming less power than current ATI graphics processors. In addition, Samsung’s 900Mhz GDDR3 is engineered to work seamlessly with the ATI Radeon HD 3850 GPU. Samsung’s 1.2 Ghz GDDR4 is offered in a 16Mx32 configuration, while the 900 Mhz GDDR3 is available in a 8Mx32 configuration.

The AMD Phenom processor incorporates four natively integrated processor cores and provides a system bandwidth of up to 14.4 Gbps of high bandwidth I/O. The ATI Radeon HD 3800 series is designed for Windows Vista, with the ability to navigate the Windows Aero 3D user interface.

Samsung‘s 1.2 Ghz GDDR4 and 900 Mhz GDDR3 are now in mass production. Samsung’s DDR2-1066 DRAM is planned to be mass produced beginning at the end of the year.

What if you could capture every waking moment of your entire life, store it on your computer and then recall digital snapshots of everything you’ve seen and heard with just a quick search?

Renowned computer scientist Gordon Bell, head of Microsoft’s Media Presence Research Group and founder of the Computer History Museum in Silicon Valley, thinks he might be able to do just that.

He calls it a “surrogate memory,” and what he considers an early version of it even has an official name — MyLifeBits. “The goal is to live as much of life as possible versus spending time maintaining our memory system,” Bell explains.

Perfect surrogate memory would be supplemental to, but ultimately as good as, your original memory. It could let you listen to every conversation you had when you were 21 or find that photograph of the obscure date you had on summer vacation. As Bell says, it would “supplement (and sometimes supplant) other information-processing systems, including people.”

MyLifeBits isn’t quite there yet, but Bell’s nevertheless “gone paperless” for the past decade as part of the project, keeping a detailed, digitized diary that documents his life with photographs, letters and voice recordings.

So that he doesn’t miss out on important daily events, Bell wears a SenseCam, developed by Microsoft Research, that takes pictures whenever it detects he may want a photograph.

The camera’s infrared sensor picks up on body heat and takes snapshots of anyone else in the room, adjusting itself as available light changes.

Not only does MyLifeBits record your life’s digital information, but the software, developed by Bell’s researchers Jim Gemmell and Roger Lueder, also can help you retrieve it.

“MyLifeBits is a system aimed at capturing cyber-content in the course of daily life with the goal of being able to utilize it in various ways at work, in our personal life — e.g. finances, family, health and for our future memory,” Bell says.

Simply enter a keyword such as “pet,” for example, and the search engine will find all available information on your childhood puppy. It also can run more intricate searches, allowing you to cross-reference all associations linked to certain people or places.

If you’re having difficulty remembering where you were and who you were with on a certain day, MyLifeBits would remind you.

Bell says MyLifeBits could have another important benefit: It may actually improve your real memory. According to Bell, being reminded of someone in a photograph or screensaver strengthens our recollections.

But since all this is digitally recorded, what if hackers find it? Couldn’t MyLifeBits be a threat to privacy and a boon to identity thieves? Bell doesn’t seem overly concerned.

An even bigger hurdle for the project is cost-efficiency. The Microsoft team predicts that by 2010, a 1-terabyte (1,000-gigabyte) hard drive will cost less than $300.

That could easily hold all text documents, voice files and photographs of a person’s complete life experience — but if it came to video, it would be only enough for four hours per day for an entire year.

We rely on our hard drives for saving our music, photographs, e-mails and videos — so perhaps life-logging software and memory prosthetics are simply the next stage in the evolution of our relationship to the computer. More at FoxNews.

MyLifeBits Project

MyLifeBits is a lifetime store of everything. It is the fulfillment of Vannevar Bush’s 1945 Memex vision including full-text search, text & audio annotations, and hyperlinks. There are two parts to MyLifeBits: an experiment in lifetime storage, and a software research effort.

The experiment: Gordon Bell has captured a lifetime’s worth of articles, books, cards, CDs, letters, memos, papers, photos, pictures, presentations, home movies, videotaped lectures, and voice recordings and stored them digitally. He is now paperless, and is beginning to capture phone calls, IM transcripts, television, and radio.

The software research: Jim Gemmell and Roger Lueder have developed the MyLifeBits software, which leverages SQL server to support: hyperlinks, annotations, reports, saved queries, pivoting, clustering, and fast search. MyLifeBits is designed to make annotation easy, including  gang annotation on right click, voice annotation, and web browser integration. It includes tools to record web pages, IM transcripts, radio and television. The MyLifeBits screensaver supports annotation and rating. We are beginning to explore features such as document similarity ranking and faceted classification. We have collaborated with the WWMX team to get a mapped UI, and with the SenseCam team to digest and display SenseCam output.

Support for academic research: Our team helped administer the Microsoft Research Digital Memories (Memex) request for proposals. Winners are now posted. We also helped establish the ACM CARPE Workshops: CARPE 2004    CARPE 2005   CARPE 2006

NEW! See our on-line virtual demo

Seoul, November 15, 2007 - Hynix Semiconductor today introduced the industry’s first 1 Gigabit GDDR5 Graphics DRAM.

GDDR, Graphics Double Data Rate, is an ultra high speed Graphics DRAM that processes graphic data in electronic devices such as personal computer and game consoles. As high definition digital media players market continues to expand, demand for high-speed and high density GDDR products is rapidly increasing.

The industry’s first 1Gb GDDR5 from Hynix is also the fastest and highest density graphics memory available. It operates at 5Gbps bandwidth and processes up to 20 Gigabytes of data per second with a 32-bit I/O, ideal in applications with high definition video and cinematic and photo-realistic graphics content. A bandwidth of 20 Gigabytes per second offered by the Hynix 1Gb GDDR5 can process more than 20 hours of DVD quality video.

The fifth generation graphics memory GDDR5 improves data processing speed by more than two times than that of GDDR3, the current mainstream graphics DRAM device. With its improved speed and power characteristics, GDDR5 is projected to succeed GDDR3 and dominate the graphics DRAM market from the 2nd half of 2008.

Hynix plans to start mass production of GDDR5 in the first half of next year to meet the increasing demand for high performance graphics DRAM. More at Hynix.

Nov 09, ‘07 — Samsung said Friday it had stopped selling flat panel televisions and other consumer products in Japan, citing poor profitability.

Samsung has emerged in the past decade and a half as a global force in consumer electronics, taking on and even beating Japanese rivals in places such as the United States and Europe. But penetrating the competitive Japanese consumer market, home to rivals such as Matsushita Electric Industrial Co., Sony Corp. and Sharp Corp., appears to have been a considerable challenge.

“We judged direct sales to individual consumers are less profitable than business-to-business sales,” Lee Eun-hee, a Samsung spokeswoman, said of the reasoning behind the decision. Samsung sold LCD TVs, DVD players, MP3 music players and other items in Japan via the Internet, but stopped at the end of October, Lee said. It had ceased sales in retail outlets in August last year, she said.

Samsung will sell flat screen computer monitors directly to businesses and will continue to sell components such as memory chips and liquid crystal displays, she said. The company will also keep supplying mobile phone handsets to Japanese telecommunications company Softbank Corp., she said.

Since 2004, Samsung has produced LCD panels at a joint venture with Sony to meet strong demand for flat screen TVs, which has soared in recent years as consumers have switched to the sleeker versions.

Tokyo, Japan – November 07, ‘07 – Elpida, Japan’s leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has completed development of a 1-Gigabit DDR2 SDRAM based on new 65nm process technology. The 65nm process allows Elpida to create the world’s smallest chip products.

“The new 65nm process and our own storehouse of design technology have made it possible for the 1-Gigabit DDR2 SDRAM to become the world’s smallest chip,” said Hideki Gomi, Officer of Process Technology. “Given the imminent transition from 512-Megabit to 1-Gigabit products, Elpida is now geared up to produce high-performance 1-Gigabit DRAMs at lower cost,” he added.

In December 2006 Elpida started mass production of the industry’s first DRAMs using 70nm process technology and has been realizing significant cost reductions. The 70nm process now applies to mass production at the Hiroshima Elpida E300 Fab and the Taiwan-based Rexchip Electronics Corporation joint venture.

Sampling of 65nm new products will begin in December 2007. Mass production is scheduled to start in the first quarter of CY 2008. The planned second-quarter introduction of 65nm technology at Taiwan-based Rexchip should boost production to even higher levels. More at Elpida.

World’s first perpendicular magnetic anisotropy MTJ device.

Tokyo, Japan — Nov 06, ‘07 — Toshiba today announced important breakthroughs in key technologies for Magnetoresistive Random Access Memory (MRAM), a promising, next-generation semiconductor memory device. The company has successfully fabricated a MRAM memory cell integrating the new technologies and verified its stable performance. Full details of the new technologies were presented today at the 52^nd Magnetism and Magnetic Materials Conference in Tampa, Florida, USA which is being held from November 5^th to 9^th.

MRAM is a highly anticipated next-generation non-volatile semiconductor memory device that offers fast random write/access speeds, enhances endurance in operation with very low power consumption. MRAM can theoretically achieve high level integration as the memory cell structure is relatively simple.

In making these major advances, Toshiba applied and proved the spin transfer switching and perpendicular magnetic anisotropy (PMA) technologies in a magnetic tunnel junction, which is a key component in the memory cell.

Spin transfer switching uses the properties of electron spin to invert magnetization and writes data at very low power levels. It is widely regarded as a major candidate among next-generation principles for new memory devices. PMA aligns magnetization in the magnetic layer perpendicularly, either upward or downward, rather than horizontally as in in-plane shape anisotropy layers.

The technology is being increasingly used to enhance for storage capacity for high-density hard disc drives (HDDs), and Toshiba has successfully applied it to a semiconductor memory device. With PMA data write operation and magnetic switching can be achieved at a low energy level. Toshiba also overcame the hurdle of achieving the required precision in the interface process and significantly cutting write power consumption.

In order to realize a miniature memory cell based on PMA, Toshiba optimized the materials and device structure of the new MRAM. Close observation of performance confirms stable operation (see the diagram for full explanation of structure). More at Toshiba.

Nov 06, ‘07 — Tech-On! is reporting on Sony, on the heels of its increased capabilities to record Holographic Disc more densly, recording 7-layer Holographic disc and further aiming to record 500GB of data on 20-layer disc by 2010.

In their words, “Sony Corp wrote and read data on a medium equivalent to a seven-layer disc by using “Micro-Reflector method,” a multilayer recording technology using holographic recording.

The company calculated the error rates of reproduced signals after signal conditioning such as equalizing. Until now, the company wrote and read on discs of up to four layers and announced only the eye patterns of reproduced signals.

This time, the achievement was announced at ISOM’ 07, an international conference on optical memory, which took place Oct 21-25, 2007, in Singapore. At the conference, Sony made speeches about speeding up data transmission speed, improving memory density per layer and increasing the number of recording layers even more.

In the Micro-Reflector method, lights are shed on both sides of a holographic medium. The focus points of the lights meet and interact with each other in a recording layer to form interference fringes. An interference fringe has an information amount of one bit. To read the data, a light is shed on one side of the medium.” More at Tech-On!

Nov 05, ‘07 — Sony increased the surface recording density of coaxial holographic recording to 270 Gbits/inch². This is 1.5 times the density of the company’s existing holographic recording technology, which is 180 Gbits/inch².

A card type holographic medium called coupon medium was used as the recording medium. The achievement was presented at ISOM’07, an international conference on optical memories, which ran from Oct 21-25, 2007 in Singapore, as well as other events.

The company made two improvements to enhance the recording density. First, the NA of the objective lens was increased form 0.64 to 0.85. The improvement of NA was obtained by changing the design of lens group, etc. The enhancement of NA results in smaller interference fringes recorded on the medium, thereby increasing the recording density from 180 to 230 Gbits/inch².

Second, the recording capacity per page was increased from 95 to 135 Kbits. As a result, the recording density was improved from 230 to 270 Gbits/inch². More at Tech-On!

Seoul, Nov 05 (Korea Newswire)– Samsung has become the first in the industry to sample 1.8-inch and 2.5-inch 64Gigabyte (GB) solid state drives (SSD) with a super-fast SATA (Serial ATA) II/native SATA interface. With a sequential write speed of 100Megabyte per second (MBps) and sequential read speed of 120MBps, the SATA II SSD is poised to expand the market for solid state drives from notebook PCs to corporate servers and other high-performance storage applications.

“The 64GB SATA II SSD is based on Samsung’s cutting-edge NAND technology with dramatically improved performance specs that are taking system performance to a whole new level of efficiency,” said Jim Elliott, director, NAND flash marketing, Samsung Semiconductor, Inc.

Samsung’s SATA II SSD combines a 50 nm-class, single-level-cell (SLC) 8Gb flash chip with a Samsung proprietary, high-speed SATA controller and supporting software.

The new SATA II SSD has a 3.0 gigabit-per-second (Gbps) interface speed which is twice as fast as its SATA I predecessor. Moreover, the SATA II SSD requires only half as much power as the 1.9 watts consumed by hard drives now used in notebook PCs and only one-tenth the power consumed by enterprise-class 15,000rpm hard drives in servers.